Diffusion Bonding Crystals| Diffusion laser bonded crystal

Product Description

Bonded Laser Crystals

The Bonded Laser chips are generally manufactured from Nd:YAG and Cr:YAG diffusion bonded together and lasing at 1064 nm while pumped at 808 nm either by transversal pumping or longitudinal pumping setups. Diffusion bonding introduces only very little optical loss at the interface surfaces which is especially required for laser resonators. It is possible to produce a monolithic laser chip with excellent stability performance when the side faces are laser grade polished, exactly parallel to each other and correctly coated to form the cavity with one side HR coating and on other side a coating which is acting as output coupler for 1064 nm. The pulse energy is mainly defined by the initial transmission of the saturable absorber crystal Cr:YAG and the output coupling of the laser coating. For very high energy (over 30 mJ) Impex already produced chips with concave radius on one end face in order to compensate for thermal lensing. Further on it is also possible to add an undoped YAG end cap to cool the laser crystal at the entrance face.

Advantage of Diffusion bonded crystals

High damage threshold
High beam quality
High efficiency
Low heat effect
Compact size

Diffusion Bonded Nd:YAG/YAG, Nd:YAG/Cr4+:YAG, Nd:YVO4/YVO4 laser crystals are offered for compact laser aplication such as passive Q-switching, SHG etc. These Diffusion Bonded Crystals are combined by optical contact method and further bonded under high temperature. Diffusion Bonded Crystal helps to decrease thermal lensing effect considerably.

Capability of Diffusion Bonded Laser Crystal

1) Diameter: 3 ~ 14mm 
2) Length: 1 ~ 160mm 
3) Anti-reflection Coating: R<0.1 @ 1064nm 
High transmission Coating: T>95% @ 808nm 
High reflection Coating: R>99.8% @ 1064nm

Specification of Diffusion Bonded Laser Crystal 

1) Orientation: +/-0.5deg. 
2) Wavefront Distortion: <λ/8 per inch
3) Surface quality: better than 20/10 Scratch/Dig
4) Parallelism: < 10 arc seconds 
5) Perpendicularity: < 5 arc minutes 
6) Surface flatness: <λ/10 at 632.8nm 
7) Clear aperture: Central 95% 
8) Chamfer: 0.15mm @45deg.
9) Damage threshold: over 15J/cm2 (without coating), over 700 MW/cm2 (coating)